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CAS NO.1312-41-0
Product Name: | Indium(III) antimonide |
Synonyms: | INDIUM ANTIMONIDE;indiumcompd.withantimony(1:1);Indium antimonide (99.99%-In) PURATREM;Indiumantimonideblackxtl;indium stibide;INDIUM ANTIMONIDE, 99.99+%;Indium antimonide, 99.5%;INDIUM ANTIMONIDE, 99.999% |
CAS: | 1312-41-0 |
MF: | InSb |
MW: | 236.58 |
EINECS: | 215-192-3 |
Product Categories: | Inorganics;Alloys;Materials Science;Metal and Ceramic Science;inorganic compound;Ceramic Science;Indium;Materials Science;Metal &;Metal and Ceramic Science;Metals;New Products for Materials Research and Engineering |
Mol File: | 1312-41-0.mol |
Uses | Indium antimonide finds use in infrared detectors, including FLIR systems, thermal imaging cameras, infrared astronomy and in infrared homing missile guidance systems, in fast transistors. It is used in thermal image detectors using photo-electromagnetic detectors or photodiodes. |
Uses | Crystal structure: Zinc blende structure, cubic |
Uses | In semiconductor electronics. Grown p-n junctions(Indium(III) antimonide) have been made by doping a melt with an acceptor impurity such as zinc or cadmium, and dipping in an n-type crystal. Rate-grown junctions have also been made. Broad-area surface junctions have been produced by out-diffusing antimony in vacuum from the surface of an n-type crystal, producing a p-n junction just inside the surface. Also has photoconductive, photoelectromagnetic, and magnetoresistive properties. Useful as an infrared detector and filter, and in Hall effect devices. |
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